Clare Boothe Luce
Department of Materials Science and Engineering
Email : email@example.com
Phone : (302) 831-4816
207 DuPont Hall
Presidential Early Career Award for Scientists and Engineers, 2019
NSF EPSCoR RII Track-4 Fellowship, 2019
American Vacuum Society Peter Mark Memorial Award, 2019
Department of Energy Early Career Award, 2017
North American Molecular Beam Epitaxy (NAMBE) Young Investigator Award 2016
The materials and structures we create are grown using molecular beam epitaxy, a technique in which a material is grown one atomic layer at a time–3D printing at the nanoscale. With this technique, we can create extremely high quality materials and complicated structures. Molecular beam epitaxy is widely used in industry to create lasers and light emitting diodes, among other devices. The MBE growth is done using the Materials Growth Facility at UD. After growth, the materials are characterized using the shared equipment in the Advanced Materials Characterization Lab, the Center for Advanced Microscopy and Microanalysis, and the University of Delaware Nanofabrication Facility.
Y. Wang, J. Bork, S. Law, and J. Zide. Improved epitaxial growth of TbAs film on III–V semiconductors. Journal of Vacuum Science and Technology A, 38, 033405 (2020).
T. Ginley, Y. Zhang, C. Ni, and S. Law. Epitaxial growth of Bi2Se3 in the (0015) orientation on GaAs (001). Journal of Vacuum Science and Technology A, 38, 023404 (2020).
Y. Wang, D. Wei, P. Sohr, J. Zide, and S. Law. Extending the Tunable Plasma Wavelength in III–V Semiconductors from the Mid‐Infrared to the Short‐Wave Infrared by Embedding Self‐Assembled ErAs Nanostructures in GaAs. Advanced Optical Materials, 1900937 (2020).
D. Wei, S. Maddox, P. Sohr, S. Bank, and S. Law. Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant. Optical Materials Express, 10, 302-311 (2020).
P. Sohr, C. I. Ip, and S. Law. Far-field thermal emission from a semiconductor hyperbolic metamaterial. Optics Letters, 44, 1138-1141 (2019).
P. Sohr, D. Wei, S. Tomasulo, M. Yakes, and S. Law. Simultaneous Large Mode Index and High Quality Factor in Infrared Hyperbolic Metamaterials. ACS Photonics, 5, 4003–4008 (2018).
T. Ginley, Y. Wang, Z Wang, and S. Law. Dirac plasmons and beyond: the past, present, and future of plasmonics in 3D topological insulators. MRS Communications 8, 782-794 (2018).
Y. Wang and S. Law. Optical properties of (Bi1-xInx)2Se3 thin films. Opt. Mat. Exp. 8, 2570-2578 (2018). Selected as an Editor’s Pick Article!
T. Ginley and S. Law. Coupled Dirac plasmons in topological insulators. Adv. Opt. Mat. 6, 1800113 (2018).
Y. Wang, T. Ginley, and S. Law. Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx)2Se3 buffer layers. J. of Vac. Sci. Technol. B 36, 02D101 (2018). Selected as an Editor’s Pick Article!
D. Wei, C. Harris, and S. Law. Volume plasmon polaritons in semiconductor hyperbolic metamaterials. Opt. Mat. Exp. 7, 2672-2681 (2017).
Y. Wang, T. Ginley, C. Zhang, and S. Law. Transport properties of Bi2(Se1-xTex)3 thin films grown by molecular beam epitaxy. J. of Vac. Sci. Technol. B 35, 02B106 (2017).
T. Ginley, Y. Wang, and S. Law. Topological insulator film growth by molecular beam epitaxy: a review. Crystals 6, 154 (2016).
D. Wei, C. Harris, C. C. Bomberger, J. Zhang, J. Zide, and S. Law. Single-material semiconductor hyperbolic metamaterials. Opt. Exp. 24, 8735-8745 (2016).
T. Ginley and S. Law. Growth of Bi2Se3 topological insulator films using a selenium cracker source. J. of Vac. Sci. Technol. B 34, 02L105 (2016).