Joshua Zide

Joshua Zide

Associate Professor

Department of Materials Science and Engineering

Email : zide@udel.edu
Phone : (302) 831-3244
204 DuPont Hall

Biosketch

Dr. Zide`s research interests focus primarily on the nanoscale engineering of novel semiconductor and composite electronic materials for energy conversion and (opto) electronic devices. More specifically, Dr. Zide`s work focuses on the epitaxial growth of semiconductors and metal/semiconductor nanocomposites by molecular beam epitaxy (MBE). These nanocomposites consist of conventional III V semiconductors with epitaxially-embedded nanoparticles. The resulting material can have electronic, optical, and thermal properties which are extremely different from the constituent materials. New semiconductors being explored include dilute bismuthides, in which the incorporation of small amounts of bismuth cause anamolously narrow bandgaps, making these materials useful for optoelectronics and thermoelectrics.

Dr. Zide`s focus is on using these unique abilities to tailor the properties of materials to improve the performance of a wide variety of devices and also enable the development of devices which would otherwise be infeasible to realize. Specific problems of interest include energy conversion (specifically, thermoelectric and photovoltaic), integrated optoelectronics, and ultrafast optical devices, but his interests are wide and his research is extremely interdisciplinary.

Awards

  • 2014 American Vacuum Society – Peter Mark
  • Memorial Award
  • 2012 Department of Energy Early Career Award
  • 2011 North American Molecular Beam Epitaxy
  • Young Investigator
  • 2009 Office of Naval Research Young Investigator

Research Interests

  • Epitaxial growth of novel semiconductors and metal/semiconductor nanocomposites, including III-Bi- V semiconductors and lanthanide-V materials
  • New materials for (opto)electronic devices, including thermoelectrics, photovoltaics, terahertz detectors, and infrared sources/detectors
  • Characterization of morphological and electronic properties of electronic materials

Representative Publications

  1. For a complete listing of publications please see full CV

    2016

    1. ·Matthew Lewis, Kevin Bichoupan, S. Ismat Shah, and Joshua M. O. Zide. “Growth of ErAs Nanoparticles by Pulsed Laser Ablation in an Inert Environment.” Journal of Electronic MaterialsPublished Online. (2016).http://dx.doi.org/10.1007/s11664-016-4775-z
    2. Henry Aldridge, Jr., Aaron G. Lind, Cory C. Bomberger, Yevgeniy Puzyrev, Christopher Hatem, Russell M. Gwilliam, Joshua M. O. Zide, Sokrates T. Pantelides, Mark E. Law, and Kevin S. Jones. “Implantation and Diffusion of Silicon Marker Layers in In0.53Ga0.47As.” Journal of Electronic Materials 45, 8, pp. 4282-4287. (2016). http://dx.doi.org/10.1007/s11664-016-4616-0.
    3.   Diane G. Sellers, Jing Zhang, Eric Y. Chen, Yujun Zhong, Matthew F. Doty, and Joshua M. O. Zide. “Novel nanostructures for efficient photon upconversion and high-efficiency photovoltaics.” Solar Energy Materials and Solar Cells, 155, p. 446-453. (2016). doi:10.1016/j.solmat.2016.06.043
    4.   Eric Y. Chen, Jing Zhang, Diane G. Sellers, Yujun Zhong, Joshua M. O. Zide, and Matthew F. Doty. A Kinetic Rate Model of Novel Upconversion Nanostructures for High-Efficiency Photovoltaics.” IEEE Journal of Photovoltaics, PP, 99 1-8 (2016).10.1109/JPHOTOV.2016.2567101
    5. D. Wei, C. Harris, C. C. Bomberger, J. Zhang, J. Zide, and S. Law. “Single-materials semiconductor hyperbolic metamaterials.” Optics Express, 24, 8, 8735 (2016). http://dx.doi.org/10.1364/OE.24.008735
    6. A. G. Lind, H. L. Aldridge Jr., C. C. Bomberger, C. Hatem, J. M. O. Zide, and K. S. Jones. “Fermi-level effects on extended defect evolution in Si+ and P+implanted In0.53Ga0.47As.” ECS Journal of Solid State Science and Technology, 5, 4, P3073-3077 (2016). http://dx.doi.org/10.1149/2.0141604jss

    2015

    1. ·  G. M. T. Chai, C. A. Broderick, E. P. O’Reilly, Z. Othaman, S. R. Jin, J. P. Petropoulos, Y. Zhong, P. B. Dongmo, J. M. O. Zide, S. J. Sweeney, and T. J. C. Hosea. “Experimental and modeling study of InGaBiAs/InP alloys with up to 5.8% Bi, and withΔso > Eg.” Semiconductor Science and Technology30, 094015. (2015). http://dx.doi.org/10.1088/0268-1242/30/9/094015
    2. ·  Cory C. Bomberger, Laura R. Vanderhoef, Abdur Rahman, Deesha Shah, D. Bruce Chase, Antoinette J. Taylor, Abul K. Azad, Matthew F. Doty and Joshua M. O. Zide. “Determining the band alignment of TbAs:GaAs and TbAs:In0.53Ga0.47As.” Applied Physics Letters 107, 102103. (2015). http://dx.doi.org/10.1063/1.4930816
    3. ·  A. G. Lind, H. L. Aldridge, Jr., C. C. Bomberger, C. Hatem, J. M. O. Zide, and K. S. Jones. “Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As.” Journal of Vacuum Science & Technology B33, 021206. (2015).  http://dx.doi.org/10.1116/1.4914319
    4. ·  D. G. Sellers, S. J. Polly, Y. Zhong, S. M. Hubbard, J. M. O. Zide, and M. F. Doty. “New Nanostructured Materials for Efficient Photon Upconversion.” IEEE Journal of Photovoltaics5, 224. (2015). http://dx.doi.org/10.1109/JPHOTOV.2014.2367865

    2014

    1. ·  P.B. Dongmo, M. Hartshorne, T. R. Cristiani, M. L. Jablonski, C. C. Bomberger, D. Isheim, D. N. Seidman, M. Taheri, and J. M. O. Zide. “Observation of Self-Assembled Core-Shell Structures in Epitaxially-Embedded TbErAs Nanoparticles.” small, 10, 4290. (2014). http://dx.doi.org/10.1002/smll.201400891
    2. ·  C. R. Haughn, E. H. Steenbergen, L. J. Bissell, E. Y. Chen, K. G. Eyink, J. M. O. Zide, and M. F. Doty, “Carrier transfer from InAs quantum dots to ErAs metal nanoparticles.” Applied Physics Letters105, 103108. (2014).http://dx.doi.org/10.1063/1.4895519
    3. ·  L. R. Vanderhoef, A. K. Azad, C. C. Bomberger, D. R. Chowdhury, D. B. Chase, A. J. Taylor, J. M. O. Zide, and M. F. Doty, “Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy.” Physical Review B, 89, 045418. (2014). http://dx.doi.org/10.1103/PhysRevB.89.045418