Joshua Zide

Joshua Zide

Professor and Chair

Department of Materials Science and Engineering

Email :
Phone : (302) 831-3244
201C DuPont Hall


Dr. Zide’s research interests focus primarily on the nanoscale engineering of novel semiconductor and composite electronic materials for energy conversion and (opto) electronic devices. More specifically, Dr. Zide’s work focuses on the epitaxial growth of semiconductors and metal/semiconductor nanocomposites by molecular beam epitaxy (MBE). These nanocomposites consist of conventional III V semiconductors with epitaxially-embedded nanoparticles. The resulting material can have electronic, optical, and thermal properties which are extremely different from the constituent materials. New semiconductors being explored include dilute bismuthides, in which the incorporation of small amounts of bismuth cause anamolously narrow bandgaps, making these materials useful for optoelectronics and thermoelectrics.

Dr. Zide’s focus is on using these unique abilities to tailor the properties of materials to improve the performance of a wide variety of devices and also enable the development of devices which would otherwise be infeasible to realize. Specific problems of interest include energy conversion (specifically, thermoelectric and photovoltaic), integrated optoelectronics, and ultrafast optical devices, but his interests are wide and his research is extremely interdisciplinary.


  • 2021 AVS: Science and Technology of Materials, Interfaces, and Processing – Fellow
  • 2014 American Vacuum Society – Peter Mark Memorial Award
  • 2012 Department of Energy Early Career Award
  • 2011 North American Molecular Beam Epitaxy Young Investigator
  • 2009 Office of Naval Research Young Investigator

Research Interests

  • Epitaxial growth of novel semiconductors and metal/semiconductor nanocomposites, including III-Bi- V semiconductors and lanthanide-V materials
  • New materials for (opto)electronic devices, including thermoelectrics, photovoltaics, terahertz detectors, and infrared sources/detectors
  • Characterization of morphological and electronic properties of electronic materials

Recent Publications


  1. Xiangyu Ma, Yuejing Wang, Joshua Zide, and Matthew Doty. “Three-Electrode Device for Applying Two-Dimensional Vector Electric Fields to Single InAs Quantum Dots.” Physical Review Applied, 13, 064029. (2020).
  2. Yuejing Wang, James Bork, Stephanie Law, and Joshua M. O. Zide. “Improved epitaxial growths of TbAs film on III-V semiconductors.” Journal of Vacuum Science and Technology A, 38, 033405. (2020).
  3. Lauren N. McCabe, Yuejing Wang, Matthew F. Doty, and Joshua M. O. Zide. “Low-density patterned InAs quantum dot arrays.” Journal of Vacuum Science & Technology B, 38, 022803 (2020).
  4. Yuejing Wang, Dongxia Wei, Patrick Sohr, Joshua M. O. Zide, and Stephanie Law. “Extending the Tunable Plasma Wavelength in III-V Semiconductors from Mid-Infrared to the Short-Wave Infrared by Embedding Self-Assembled ErAs Nanostructures in GaAs.” Advanced Optical Materials, 1900937. (2020).


  1. Bo E. Tew, Yuying Zhang, Areej Shahid, Matthew R. Lewis, Chaoying Ni, and Joshua M. O. Zide. “Growth and Thermal Characterization of TbAs Nanoparticles Grown by Inert Gas Condensation.” Journal of Electronic Materials, 491, 566. (2019).
  2. Jing Zhang, Yuejing Wang, Shoaib Khalid, Anderson Janotti, Greg Haugstad, and Joshua M. O. Zide. “Strong band gap reduction in highly mismatched alloy InAlBiAs grown by molecular beam epitaxy.” Journal of Applied Physics, 126, 095704. (2019).
  3. Jing Zhang, Eric Y. Chen, Matthew F. Doty, and Joshua M. O. Zide. “Sensitivity analysis of the theoretical performance of semiconductor upconversion nanostructures.” Journal of Applied Physics, 126, 044301. (2019).
  4. Eric Y. Chen, Christopher Milleville, Joshua M. O. Zide, Matthew F. Doty, and Jing Zhang. “Upconversion of low-energy photons in semiconductor nanostructure for solar energy harvesting.” MRS Energy and Sustainability, 5, E16. (2019).
  5. Bo E. Tew, Matthew R. Lewis, Chun-Yen Hsu, Chaoying Ni, and Joshua M. O. Zide. “Growth of ErAs:GaAs Nanocomposite by Liquid Phase Epitaxy.” Journal of Crystal Growth518, 34-38. (2019).
  6. Bo E. Tew, Pratyusha Vempati, Laura E. Clinger, Cory C. Bomberger, Nicole I. Halaszynski, Tela Favaloro, Jae H. Seol, Joseph P. Feser, Arun Majumdar, Ali Shakouri, John E. Bowers, Je-Hyeong Bahk, and Joshua M. O. Zide. “High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material.” Advanced Electronic Materials5, 1900015, (2019).
  7. Matthew R. Lewis, Bo. E. Tew, and Joshua M. O. Zide. “Formation of ErAs Nanoparticles by Pulsed Laser Ablation of Pressed Powder Targets.” Journal of Electronic Materials48, 3370, (2019).
  8. Etienne Gagnon, Amy Lytle, Charles Jabbour, and Joshua M. O. Zide. “Simulating nanoisland layers in THz detectors using a Monte Carlo method.” Journal of Applied Physics, 125, 034501. (2019).


  1. Christopher C. Milleville, Eric Y. Chen, Kyle R. Lennon, Jill M. Cleveland, Abinah Kumar, Jing Zhang, James A. Bork, Ansel Tessier, James M. LeBeau, D. Bruce Chase, Joshua M. O. Zide, and Matthew F. Doty. “Engineering Efficient Photon Upconversion in Semiconductor Heterostructures.” ACS Nano13, 489. (2018).
  2. Abhishek Iyer, James Hack, David Alejandro Angel Trujillo, Bo Tew, Joshua Zide, and Robert Opila. “Effects of Co-Solvents on the Performance of PEDOT:PSS Films and Hybrid Photovoltaic Devices.” Applied Sciences8, 2052. (2018).
  3. Matthew R. Lewis, Roddel A. Remy, Bo E. Tew, and Joshua M. O. Zide. “Size dependent arsenic volatilization in ErAs nanoparticle powders.” Applied Physics Letters, 113, 163105. (2018).
  4. Eric Y. Chen, Zhuohui Li, Christopher C. Milleville, Kyle R. Lennon, Joshua M. O. Zide, and Matthew F. Doty. “CdSe(Te)/CdS/CdSe Rods Versus CdTe/CdS/CdSe Spheres: Morphology-Dependent Carrier Dynamics for Photon Upconversion.” IEEE Journal of Photovoltaics, 8, 746-751. (2018).


  1. Cory C. Bomberger, Matthew R. Lewis, Laura R. Vanderhoef, Matthew F. Doty, and Joshua M. O. Zide. “Review Article: Overview of lanthanide pnictide films and nanoparticles epitaxially incorporated into III-V semiconductors.” Journal of Vacuum Science and Technology B35, 030801. (2017).
  2. Henry Aldridge, Jr, Aaron G. Lind, Cory C. Bomberger, Yevgeniy Puzyrev, Joshua M. O. Zide, Sokrates T. Pantelides, Mark E. Law, and Kevin S. Jones. “N-type doping strategies for InGaAs.” Materials Science in Semiconductor Processing, 62, 171-179. (2017).